Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models.Adopts a unified approach to guide students through the confusing array of MOSFET modelsLinks MOS physics to device models to prepare practitioners for real-world design activitiesHelps fabless designers bridge the gap with off-site foundriesFeatures rich coverage of: quantum mechanical related phenomenaSi-Ge strained-Silicon substratenon-classical structures such as Double Gate MOSFETsPresents topics that will prepare readers for long-term developments in the fieldIncludes solutions in every chapterCan be tailored for use among students and professionals of many levelsComes with MATLAB code downloads for independent practice and advanced studyThis book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioners reference.Access the MATLAB code, solution manual, and lecture materials at the companion website:

Rezensionen ( 0 )
Every Friday we give gifts for the best reviews.
The winner is announced on the pages of ReadRate in social networks.
Zitate (0)
Sie können als Erste ein Zitat veröffentlichen.